Imaging ion-bombarded III-V semiconductor surfaces: a scanning tunnelling microscopy study of InSb(100)-Reference-Cited by-同舟云学术

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Imaging ion-bombarded III-V semiconductor surfaces: a scanning tunnelling microscopy study of InSb(100)

Published:1993-01-01 Issue:1S Volume:8 Page:S342-S344
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Schweitzer M O,Leibsle F M,Jones T S,McConville C F,Richardson N V

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=1S/a=076/pdf

Reference10 articles.

1. Thermal desorption of InSb surface oxides

2. The effects of surface damage on surface plasmon excitations in doped InSb(100)

3. Elevated temperature low energy ion cleaning of GaAs

4. The preparation of transmission electron microscope specimens from compound semiconductors by ion milling

5. Multilayer InSb diodes grown by molecular beam epitaxy for near-ambient temperature operation

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of sulfur passivation of InSb (0 0 1) substrates on molecular-beam homoepitaxy;Applied Surface Science;2015-11

2. Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation;Applied Surface Science;2013-07

3. Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors;Journal of Electronic Materials;2008-05-01

4. Interfacial Cleaning Effects in Passivating InSb with Al[sub 2]O[sub 3] by Atomic Layer Deposition;Electrochemical and Solid-State Letters;2008

5. Structure and composition of chemically prepared and vacuum annealed InSb(001) surfaces;Applied Surface Science;2006-08

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