The tailoring of impact ionization phenomenon using pseudomorphic structures-applications to InGaAlAs on GaAs and InP substrates
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=3B/a=133/pdf
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1. Germanium Based Field-Effect Transistors: Challenges and Opportunities;Materials;2014-03-19
2. Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs;Semiconductor Science and Technology;2001-03-27
3. Impact ionization in compound semiconductor devices;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
4. Monte Carlo simulation of impact ionization and light emission in pseudomorphic HEMTs;Physica B: Condensed Matter;1999-12-01
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