Effects of the channel thickness on the structural and electrical characteristics of room-temperature fabricated ZnO thin-film transistors-Reference-Cited by-同舟云学术

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Effects of the channel thickness on the structural and electrical characteristics of room-temperature fabricated ZnO thin-film transistors

Published:2007-05-04 Issue:6 Volume:22 Page:608-612
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Oh Byeong-Yun,Jeong Min-Chang,Ham Moon-Ho,Myoung Jae-Min

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Photodetecting properties of ZnO-based thin-film transistors

2. High resistive layers toward ZnO-based enzyme modified field effect transistor

3. Towards See-Through Displays: Fully Transparent Thin-Film Transistors Driving Transparent Organic Light-Emitting Diodes

4. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

5. Tin oxide transparent thin-film transistors

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