Investigation of varying C4F8/O2gas ratios on the plasma etching of carbon doped ultra-low-kdielectric layers
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Overview Of Process Integration Issues For Low K Dielectrics
2. Dual‐function remote plasma etching/cleaning system applied to selective etching of SiO2 and removal of polymeric residues
3. Maintaining reproducible plasma reactor wall conditions: SF6 plasma cleaning of films deposited on chamber walls during Cl2/O2 plasma etching of Si
4. Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Etch Characteristics of Low-K Materials Using CF3I/C4F8/Ar/O2 Inductively Coupled Plasmas;Science of Advanced Materials;2022-07-01
2. C2F6/O2/Ar Plasma Chemistry of 60 MHz/2 MHz Dual-Frequency Discharge and Its Effect on Etching of SiCOH Low-kFilms;Plasma Science and Technology;2012-01
3. Effect of Low-frequency Power on F, CF2Relative Density and F/CF2Ratio in Fluorocarbon Dual-Frequency Plasmas;Plasma Science and Technology;2010-10
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