Gated delta -layer structures
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=5/a=008/pdf
Reference5 articles.
1. Theory of single δ-layer
2. Thomas-Fermi theory of δ-doped semiconductor structures: Exact analytical results in the high-density limit
3. Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperatures
4. Observation of intersubband scattering in a 2-dimensional electron system
5. Charge transfer and zero‐temperature mobility in AlxGa1−xAs/GaAs (x<0.25) heterostructures
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1. Electronic Properties of p-Type δ-Doped GaAs Structure under Electric Field;Chinese Physics Letters;2008-04
2. Electric field and intense laser field effects on the intersubband optical absorption in a graded quantum well;Journal of Physics D: Applied Physics;2005-03-04
3. DX− center formation in planar-doped GaAs:Si in strong electric fields;Journal of Experimental and Theoretical Physics;2004-09
4. INTERSUBBAND OPTICAL ABSORPTION IN QUANTUM WELLS UNDER APPLIED ELECTRIC AND INTENSE LASER FIELDS;Surface Review and Letters;2004-06
5. Intersubband Transitions of Si -Doped GaAs Layer for Different Donor Distribution Models;Chinese Physics Letters;2004-05
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