Intersubband Transitions of Si -Doped GaAs Layer for Different Donor Distribution Models
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference32 articles.
1. The delta-doped field-effect transistor (δFET)
2. Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures
3. Thomas-Fermi theory of δ-doped semiconductor structures: Exact analytical results in the high-density limit
4. Electronic transport in periodically δ‐doped GaAs layers
5. Electronic properties of multiple Si δ doping in GaAs
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1. Laser field induced interband absorption in a strained GaAs/GaAlAs double quantum well system;Solid State Communications;2011-10
2. Optical intersubband transitions in double Si δ-doped GaAs under an applied magnetic field;Superlattices and Microstructures;2009-11
3. Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions;Acta Physica Sinica;2008
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