Investigation of negative transient current of argon-implanted GaAs using photoinduced transient-current spectroscopy
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=5/a=009/pdf
Reference17 articles.
1. Fluence dependence of displacement damage, residual defects, and electrical properties of high‐temperature‐annealed Se+‐implanted GaAs
2. Investigation of the negative peak in photoinduced transient spectra of semi‐insulating gallium arsenide
3. Intensity dependence of the deep levels of semi-insulating GaAs on the annealing temperature
4. Characterisation of deep electron states in LEC grown GaAs material
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1. Explanation of positive and negative PICTS peaks in SI-GaAs;Journal of Materials Science: Materials in Electronics;2008-02-05
2. Characterization of point defects in semi-insulating InP:Fe by high-resolution photoinduced transient spectroscopy;SPIE Proceedings;2003-10-21
3. Photocurrent Transients in Presence of a Double Impurity in Semi-Insulating Semiconductors;physica status solidi (a);2000-04
4. Effects of low energy ion exposure on modulation-doped GaAs heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-11
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