Characterisation of deep electron states in LEC grown GaAs material
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/4/i=6/a=002/pdf
Reference43 articles.
1. A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs
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5. Deep-level optical spectroscopy in GaAs
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