Optical properties of GaInAs/InP multi-quantum wells grown by low-pressure MOVPE-Reference-Cited by-同舟云学术

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Optical properties of GaInAs/InP multi-quantum wells grown by low-pressure MOVPE

Published:1990-03-01 Issue:3 Volume:5 Page:222-228
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Laurenti J P,Camassel J,Reynes B,Grutzmacher D,Wolter K,Kurz H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/5/i=3/a=007/pdf

Reference27 articles.

1. High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy

2. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy

3. Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Excitonic effects in the photoconductivity of quantum-well GaxIn1−x As/InP structures;Semiconductors;1997-07

2. Morphology of InGaAs/InP QWs : from excitonic spectroscopy to HR-TEM analyses;Le Journal de Physique IV;1993-10

3. Dynamics of carrier transport and carrier capture inIn1−xGaxAs/InP heterostructures;Physical Review B;1992-07-15

4. InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition;Applied Physics Letters;1992-05-04

5. QUANTITATIVE APPROACH OF NON-STOICHIOMETRIC INTERFACES FOLLOWING A GROWTH INTERRUPTION SEQUENCE: APPLICATION TO LATTICE-MATCHED InGaAs/InP QUANTUM WELLS;Non-Stoichiometry in Semiconductors;1992

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