High brightness GaN-based flip-chip light-emitting diodes by adopting geometric sapphire shaping structure-Reference-Cited by-同舟云学术

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High brightness GaN-based flip-chip light-emitting diodes by adopting geometric sapphire shaping structure

Published:2008-01-10 Issue:2 Volume:23 Page:025015
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lee C E,Lee Y C,Kuo H C,Tsai M R,Lu T C,Wang S C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Solid-State Light Sources Getting Smart

2. Nitride-based flip-chip ITO LEDs

3. Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag

4. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

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4. Light Out‐Coupling Management in Perovskite LEDs—What Can We Learn from the Past?;Advanced Functional Materials;2020-07-02

5. Design and Fabrication of Micro-LED Display with Sapphire Micro-Reflector Array;2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS);2020-01

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