Disorder-induced phonon modes, built-in electric fields and structural properties of CdTe/GaAs heterostructures grown by MBE-Reference-Cited by-同舟云学术

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Disorder-induced phonon modes, built-in electric fields and structural properties of CdTe/GaAs heterostructures grown by MBE

Published:1999-01-01 Issue:4 Volume:14 Page:350-356
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Meléndez-Lira M,Jiménez-Sandoval S,Hernández-Calderón I

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Room‐temperature midwavelength two‐color infrared detectors with HgCdTe/CdTe multilayer structures by metal‐organic chemical‐vapor deposition

2. Blue‐green laser diodes

3. Bias-switchable dual-band HgCdTe infrared photodetector

4. RHEED, XPS, HRTEM and channeling studies of molecular beam epitaxy growth of CdTe On (001) GaAs

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1. Analysis of structural disorder on Raman spectra of semiconductors;Journal of Applied Physics;2023-04-04

2. Residual strain in cadmium telluride/gallium arsenide (001) heterostructures as a function of temperature;Materials Science in Semiconductor Processing;2015-03

3. Optical characterization of epitaxial single crystal CdTe thin films on Al2O3 (0001) substrates;Thin Solid Films;2014-11

4. Study of semiconductor surfaces and interfaces using electromodulation;Surface and Interface Analysis;2001

5. Photoreflectance study in the E1 and E1+Δ1 transition regions of CdTe;Journal of Applied Physics;2000-05-15

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