Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/10/i=3/a=017/pdf
Reference11 articles.
1. Heterostructure bipolar transistors and integrated circuits
2. GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications
3. Control of Be diffusion in molecular beam epitaxy GaAs
4. Cascaded collector current formulations of abrupt heterojunction bipolar transistors and their applications to graded HBTs with base dopant outdiffusion
5. Generation-Recombination Current in the Emitter-Base Junction of AlGaAs/GaAs HBTs
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1. High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management;IEEE Transactions on Electron Devices;2003-10
2. InGaP/GaAs power heterostructure-emitter bipolar transistor;Electronics Letters;2001
3. Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors;IEEE Transactions on Electron Devices;2000-07
4. Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor;Applied Physics Letters;1999-03-22
5. Temperature dependence of current gain of GaInP/GaAs heterojunction and heterostructure-emitter bipolar transistors;IEEE Transactions on Electron Devices;1999
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