Barrier characteristics of Cd/p-GaTe Schottky diodes based onI V Tmeasurements-Reference-Cited by-同舟云学术

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Barrier characteristics of Cd/p-GaTe Schottky diodes based onI V Tmeasurements

Published:2002-12-24 Issue:2 Volume:18 Page:75-81
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Abay B, ankaya G,G der H S,Efeoglu H,Yogurt u Y K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference52 articles.

1. Single crystalline GaSe/WSe2heterointerfaces grown by van der Waals epitaxy. I. Growth conditions

2. The crystal structures of semiconductors and a general valence rule

3. Semiconductors of the type AIIIBVI

4. Electrical properties of GaTe grown by various methods

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