Magnetron sputter epitaxy (MSE) of InSb on (100) GaAs and (100, 111) InSb for infrared detector applications
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/6/i=12C/a=009/pdf
Reference10 articles.
1. A fully monolithic InSb infrared CCD array
2. Effects of Insulated Gate on Ion Implanted InSb p+n Junctions
3. Temperature Dependence of Reverse Current in Be Ion Implanted InSb p+n Junctions
4. The current leakage mechanism in InSbp+ndiodes
5. Field-Induced Junction in InSb Gate-Controlled Diodes
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1. Epitaxial film growth and characterization;Thin Films;2001
2. Magnetron sputter epitaxy of n+-InSb on p-InSb for infrared photodiode applications;SPIE Proceedings;1999-04-08
3. Epitaxial growth of InSb films by r.f. magnetron sputtering;Thin Solid Films;1996-10
4. Magnetron sputter epitaxy and characterization of InSb/In1−xAlxSb strained layer superlattices;Journal of Crystal Growth;1994-04
5. Phonon Raman scattering in InSb/In1−xAlxSb strained-layer superlattices;Physical Review B;1993-10-15
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