MOVPE-grown MCT layers: low-temperature direct alloy growth versus IMP-Reference-Cited by-同舟云学术

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MOVPE-grown MCT layers: low-temperature direct alloy growth versus IMP

Published:1991-12-01 Issue:12C Volume:6 Page:C22-C25
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Druilhe R,Desjonqueres F,Tromson-Carli A,Lusson A,Rzepka E,Katty A,Marfaing Y,Triboulet R

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/6/i=12C/a=005/pdf

Reference16 articles.

1. The growth of highly uniform cadmium mercury telluride by a new MOVPE technique

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MOCVD of p-CdxHg1 – xTe/GaAs Heteroepitaxial Structures;Inorganic Materials;2004-01

2. Transmission electron microscope observations of dislocations in heteroepitaxial layers of CdTe-(CdHg)Te on GaAs;Materials Science and Engineering: B;1997-03

3. Electrical characteristics of Hg1?x Cd x Te (x = 0.1 to 0.8) grown on GaAs (100) by an interdiffused multilayer process;Journal of Materials Science Letters;1995

4. GaAs substrates for the MOVPE growth of (Hg,Cd)Te layers;Advanced Materials for Optics and Electronics;1994-01

5. Substrate issues for the growth of mercury cadmium telluride;Journal of Electronic Materials;1993-08

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