MOCVD of p-CdxHg1 – xTe/GaAs Heteroepitaxial Structures-Reference-Cited by-同舟云学术

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MOCVD of p-CdxHg1 – xTe/GaAs Heteroepitaxial Structures

Published:2004-01 Issue:1 Volume:40 Page:11-15
ISSN:0020-1685
Container-title:Inorganic Materials
language:en
Short-container-title:Inorganic Materials

Author:

Moiseev A. N.,Kotkov A. P.,Dorofeev V. V.,Grishnova N. D.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metastable state of the CdTe-HgTe system;Semiconductors;2014-12

2. Stimulated and spontaneous emission of CdxHg1−x Te structures in the range 3.2–3.7 µm at 77 K;Semiconductors;2004-12

3. Induced emission from CdxHg1−x Te at a wavelength of 3400 nm at 77 K;Journal of Experimental and Theoretical Physics Letters;2004-07

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