Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO2multilayers-Reference-Cited by-同舟云学术

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Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO2multilayers

Published:2007-12-12 Issue:1 Volume:23 Page:015013
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chen D Y,Wei D Y,Xu J,Han P G,Wang X,Ma Z Y,Chen K J,Shi W H,Wang Q M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Theoretical aspects of the luminescence of porous silicon

2. Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach

3. Luminescence studies of a Si/SiO2 superlattice

4. Photoluminescence characteristics from amorphous SiC thin films with various structures deposited at low temperature

5. Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices

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