Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements-Reference-Cited by-同舟云学术

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Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

Published:2009-06-05 Issue:7 Volume:24 Page:075014
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Gregušová D,Stoklas R,Eickelkamp M,Fox A,Novák J,Vescan A,Grützmacher D,Kordoš P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. High-Performance 0.1-$\mu\hbox{m}$ Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

2. Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$

3. High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors

4. A low-leakage and reduced current collapse AlGaN/GaN heterojunction field effect transistor with AlOx gate insulator formed by metal-organic chemical vapor deposition

5. Effects of surface passivation films on AlGaN/GaN HEMT with MIS gate structure

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics;Materials;2022-10-05

2. Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications;Japanese Journal of Applied Physics;2017-08-24

3. High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices;Japanese Journal of Applied Physics;2016-04-15

4. Investigation of Temperature-Dependent Characteristics of AlGaN/GaN MOS-HEMT by Using Hydrogen Peroxide Oxidation Technique;IEEE Transactions on Electron Devices;2014-08

5. Preparation and Properties of GaN-Based MOSHFETs;ECS Transactions;2012-08-30

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