Accurate and direct determination of interdiffusion parameters, a genetic algorithm approach
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures
2. Impurity‐free layer disordering in p‐i‐n and n‐i‐p AlGaAs‐GaAs multiple quantum well device structures: The Fermi level effect revisited
3. Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−xAs‐GaAs quantum‐well heterostructures
4. Erbium implanted thin film photonic materials
5. Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth
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1. Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering;Journal of Vacuum Science & Technology B;2021-12
2. Analysing the thermal-annealing-induced photoluminescence blueshifts for GaInNAs/GaAs quantum wells: a genetic algorithm based approach;Journal of Physics D: Applied Physics;2008-05-08
3. Study of Thermal-Anneal-Induced Rearrangement of N-Bonding Configurations in GaInNAs/GaAs Quantum Well;Advanced Materials Research;2007-11
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