RF and noise model of gate-all-around MOSFETs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference44 articles.
1. Speed superiority of scaled double-gate CMOS
2. Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
3. Double-gate CMOS: symmetrical- versus asymmetrical-gate devices
4. A process/physics-based compact model for nonclassical CMOS device and circuit design
5. A physical compact model of DG MOSFET for mixed-signal circuit applications - part I: model description
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