Electrical characterization of transfer transistors with pure and nitirided gate oxides in four-transistor CMOS image pixels-Reference-Cited by-同舟云学术

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Electrical characterization of transfer transistors with pure and nitirided gate oxides in four-transistor CMOS image pixels

Published:2008-05-28 Issue:7 Volume:23 Page:075032
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Song Young-Joo,Sivongsay Vetpany,Mounphoumy Khampone,Phanthavong Bounmy,Khanmvongsa Vathsana,Keophilavong Somsathith,Bounphanmy Somechanh,Phasy Somkiat,Kim Mijin,Mheen Bongki

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. CMOS image sensors: electronic camera-on-a-chip

2. Lux transfer: Complementary metal oxide semiconductors versus charge-coupled devices

3. High dynamic-range CMOS image sensor cell based on self-adaptive photosensing operation

4. Sensitivity of CMOS based imagers and scaling perspectives

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