Indirect band-gap tunnelling through a (100) GaAs/AlAs/GaAs heterostructure
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/1/i=5/a=007/pdf
Reference33 articles.
1. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
2. Tunnelling from a Many-Particle Point of View
3. Space-Charge Effects on Electron Tunneling
4. Semiconducting and other major properties of gallium arsenide
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