The effect of metal layers on the band offsets at the silicon-germanium interface
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/6/i=1/a=014/pdf
Reference9 articles.
1. Doping interface dipoles: Tunable heterojunction barrier heights and band‐edge discontinuities by molecular beam epitaxy
2. Barrier tuning by means of a quantum, interface‐induced dipole in a doping layer
3. Heterojunction band discontinuity control by ultrathin intralayers
4. Effect of an Al interlayer on the GaAs/Ge(100) heterojunction formation
5. Band offsets in heterostructures with thin interlayers
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1. Tight-binding calculations: Electronic structure and optical properties of superlattices;Superlattices and Microstructures;2010-08
2. Modification of band offsets by a ZnSe intralayer at the Si/Ge(111) interface;Applied Physics Letters;1998-05-25
3. Ballistic electron emission microscopy to probe interfaces of simple device structures;Microelectronic Engineering;1996-02
4. Heterojunction band offset engineering;Surface Science Reports;1996
5. Bonding and dipoles at semiconductor interfaces;Philosophical Magazine B;1994-05
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