Structural and optoelectronic properties of doped microcrystalline silicon carbide films-Reference-Cited by-同舟云学术

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Structural and optoelectronic properties of doped microcrystalline silicon carbide films

Published:1994-08-01 Issue:8 Volume:9 Page:1543-1548
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Demichelis F,Crovini G,Pirri C F,Tresso E,Fanclulli M,Piesarkiewicz T,Stapinski T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/9/i=8/a=017/pdf

Reference23 articles.

1. Microcrystallization formation in silicon carbide thin films

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1. Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells;IEEE Journal of Photovoltaics;2019-03

2. Electrical properties of hydrogenated microcrystalline silicon carbon alloys: effect of deposition parameters and light soaking;Journal of Physics D: Applied Physics;2015-06-16

3. Annealing effects of highly homogeneous a-Si1−xCx:H;Journal of Non-Crystalline Solids;2003-11

4. Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films;Materials Science Forum;2003-09

5. Microstructure of nanocrystalline SiC films deposited by modified plasma-enhanced chemical vapor deposition;Optical Materials;2002-10

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