Forward current-voltage characteristics of silicon carbide thyristors and diodes at high current densities-Reference-Cited by-同舟云学术

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Forward current-voltage characteristics of silicon carbide thyristors and diodes at high current densities

Published:1998-09-01 Issue:9 Volume:13 Page:1006-1010
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Levinshtein M E,Palmour J W,Rumyantsev S L,Singh R

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Turn-on process in 4H-SiC thyristors

2. Steady state current - voltage characteristics of 4H - SiC thyristors at high and superhigh current densities

3. Turn-on process in high voltage 4H-SiC thyristors

4. The forward characteristic of silicon power rectifiers at high current densities

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure;Acta Physica Sinica;2012

2. SiC THYRISTORS;International Journal of High Speed Electronics and Systems;2005-12

3. SILICON CARBIDE DIODES FOR MICROWAVE APPLICATIONS;International Journal of High Speed Electronics and Systems;2005-12

4. SiC MATERIAL PROPERTIES;International Journal of High Speed Electronics and Systems;2005-12

5. Parameters of Electron-Hole Scattering in Silicon Carbide;Materials Science Forum;2003-09

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