Parameters of Electron-Hole Scattering in Silicon Carbide-Reference-Cited by-同舟云学术

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Parameters of Electron-Hole Scattering in Silicon Carbide

Published:2003-09 Issue: Volume:433-436 Page:411-414
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Levinshtein Michael E.¹,Ivanov Pavel A.¹,Tandoev A.G.²,Yurkov S.N.³,Palmour John W.⁴,Singh Ranbir⁴

Affiliation:

1. Russian Academy of Sciences

2. All-Russia Electrotechnical Institute

3. Ioffe Physico-Technical Institute of Russian Academy of Sciences

4. Cree, Incorporation

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.411.pdf

Reference11 articles.

1. N.V. Dyakonova, P.A. Ivanov, V.A. Kozlov, M.E. Levinshtein, J.W. Palmour, S.L. Rumyantsev and R. Singh: IEEE Trans. on ED Vol. 46 (1999), p.2188.

2. M.E. Levinshtein, J.W. Palmour, S.L. Rumyantsev, and R. Singh: Semicond. Sci. Technol.: Vol. 14 (1999), p.207.

3. J. R. Krausse: Solid-State Electronics Vol. 15 (1972), p.1377.

4. T.T. Mnatsakanov, L.I. Pomortseva, V.B. Shuman, and E.G. Guk: Semiconductors Vol. 29 (1985), p.808.

5. R.A. Hopfel, J. Shah, P.A. Wolff, and A.C. Gossard: Phys. Rev. Lett. Vol. 56 (1986), p.2736.

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