Deuterium in InGaAs/GaAs strained quantum wells: an optically active impurity-Reference-Cited by-同舟云学术

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Deuterium in InGaAs/GaAs strained quantum wells: an optically active impurity

Published:1994-12-01 Issue:12 Volume:9 Page:2233-2238
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Capizzi M,Polimeni A,Bonanni B,Emiliani V,Frova A,Marangio D,Martelli F

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/9/i=12/a=012/pdf

Reference26 articles.

1. Theory of the structure and dynamics of the C impurity and C-H complex in GaAs

2. Atomic structure of shallow acceptor- and donor-hydrogen complexes in GaAs

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of irradiation in InGaAs photo devices;Journal of Radioanalytical and Nuclear Chemistry;1999-02

2. Radiation damage in InGaAs photodiodes by 1MeV fast neutrons;Radiation Physics and Chemistry;1998-12

3. Irradiation Induced Lattice Defects in In_0.53Ga_0.47As Pin Photodiodes;Materials Science Forum;1997-12

4. Degradation and recovery of In/sub 0.53/Ga/sub 0.47/As photodiodes by 1-MeV fast neutrons;IEEE Transactions on Nuclear Science;1996-12

5. Degradation of InGaAs pin photodiodes by neutron irradiation;Semiconductor Science and Technology;1996-10-01

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