Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/30/i=12/a=125005/pdf
Reference37 articles.
1. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
2. Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries
3. Undoped AlGaN/GaN HEMTs for microwave power amplification
4. Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
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