Modeling of apparent activation energy and lifetime estimation in NAND flash memory-Reference-Cited by-同舟云学术

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Modeling of apparent activation energy and lifetime estimation in NAND flash memory

Published:2015-10-30 Issue:12 Volume:30 Page:125006
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lee Kyunghwan,Kang Myounggon,Hwang Yuchul,Shin Hyungcheol

Funder

Brain Korea 21 Plus Project

Samsung Electronics

Inter-university Semiconductor Research Center (ISRC)

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=12/a=125006/pdf

Reference21 articles.

1. The Compact Modeling of Channel Potential in Sub-30-nm NAND Flash Cell String

2. A New Programming Method to Alleviate the Program Speed Variation in Three-Dimensional Stacked Array NAND Flash Memory

3. Scaling and reliability of NAND flash devices

4. Error-prediction analyses in 1X, 2X and 3Xnm NAND flash memories for system-level reliability improvement of solid-state drives (SSDs)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. BlockHammer: Improving Flash Reliability by Exploiting Process Variation Aware Proactive Failure Prediction;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2020-12

2. Charge Migration Analysis of 3D SONOS NAND Flash Memory Using Test Pattern;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2020-04-30

3. Reliability Analysis by Charge Migration of 3D SONOS Flash Memory;2020 IEEE International Reliability Physics Symposium (IRPS);2020-04

4. RBER-Aware Lifetime Prediction Scheme for 3D-TLC NAND Flash Memory;IEEE Access;2019

5. Reduction of interface traps between poly-Si and SiO2 layers through the dielectric recovery effect during delayed pulse bias stress;Nanotechnology;2017-05-10

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