Impact ionisation rate and soft energy thresholds for anisotropic parabolic band structures
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/3/i=1/a=008/pdf
Reference8 articles.
1. Auger transitions in semiconductors and their computation
2. Effect of anisotropy and warping on the Auger lifetime of direct gap semiconductors
3. A test by Monte Carlo simulation of the lucky drift theory of impact ionisation for a model with energy-dependent parameters
4. Lucky-drift mechanism for impact ionisation in semiconductors
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1. Monte Carlo Simulation of Hot Carrier Transport in Heterogeneous Ge/${\rm Al}_{x}{\rm Ga}_{1-x}{\rm As}~(0\leq x\leq 0.8)$ Multilayer Avalanche Photodiodes;IEEE Transactions on Electron Devices;2013-10
2. Numerical simulation of impact ionization in Ge/AlxGa1−xAs avalanche photodiode;Applied Physics Letters;2010-08-16
3. Avalanche multiplication in submicron AlxGa1−xAs/GaAs multilayer structures;Journal of Applied Physics;2000-09
4. Impact production of secondary electronic excitations in insulators: Multiple-parabolic-branch band model;Physical Review B;1999-08-15
5. Impact ionization in AlxGa1−xAs/GaAs single heterostructures;Journal of Applied Physics;1998-10-15
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