Oxygen precipitation in Czochralski grown silicon heat treated at 525 °C
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference44 articles.
1. Temperature-dependent neutron scattering from silicon single crystals
2. A study of oxygen precipitation in silicon using high-resolution transmission electron microscopy, small-angle neutron scattering and infrared absorption
3. Precipitation of oxygen at 485 °C: Direct evidence for accelerated diffusion of oxygen in silicon?
4. Oxygen precipitation in Czochralski grown silicon heat treated at 550 °C
5. Energy separation of neutrons scattered at small angles from silicon using time-of-flight techniques
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1. Advances in sample environments for neutron scattering for colloid and interface science;Advances in Colloid and Interface Science;2024-05
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