Atomic-order thermal nitridation of group IV semiconductors for ultra-large-scale integration
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,General Materials Science
Link
https://iopscience.iop.org/article/10.1088/2043-6262/6/1/015001/pdf
Reference21 articles.
1. Low-Temperature Epitaxial Growth ofSi/Si1-xGex/SiHeterostructure by Chemical Vapor Deposition
2. Atomic layer doping of SiGe – fundamentals and device applications
3. Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition
4. Atomic layer processing for doping of SiGe
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1. Electron-cyclotron resonance Ar plasma-induced electrical activation of B atoms without substrate heating in B doped Si epitaxial films on Si(100);Materials Science in Semiconductor Processing;2020-03
2. (Invited) Atomically Controlled Processing for Si and Ge CVD Epitaxial Growth;ECS Transactions;2016-04-26
3. C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition;Thin Solid Films;2016-03
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