Investigation of f t and f max in Si and Si 1– x Ge x based single and dual material double-gate Tunnel FETs for RF applications-Reference-Cited by-同舟云学术

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Investigation of f t and f max in Si and Si 1– x Ge x based single and dual material double-gate Tunnel FETs for RF applications

Published:2016-04-13 Issue:2 Volume:7 Page:025006
ISSN:2043-6262
Container-title:Advances in Natural Sciences: Nanoscience and Nanotechnology
language:
Short-container-title:Adv. Nat. Sci: Nanosci. Nanotechnol.

Author:

Pown M,Lakshmi B

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,General Materials Science

Link

https://iopscience.iop.org/article/10.1088/2043-6262/7/2/025006/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and investigation of gaussian doped junction free SMDG and TMDG-TFET for analog/RF applications;Engineering Research Express;2024-09-01

2. Performance optimization of AlGaAs and Al _x Ga _1−x As based SM-TM-DG-JL-TFET for an analog/RF applications;Physica Scripta;2024-06-13

3. Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1−XAs/GaYIn1−YSb vertical heterojunctionless tunneling field effect transistor;International Journal of Modern Physics B;2021-05-10

4. Design of Extended Channel Ge-source TFET for Low Power Applications;International Journal of Integrated Engineering;2020-08-31

5. Drain current modelling of unipolar junction dual material double-gate MOSFET (UJDMDG) for SoC applications;Microsystem Technologies;2019-11-20

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