Nanometer-sensitive wideband opto-mechanical switching concept

Abstract

Abstract The present paper is concerned with the mechanically extremely sensitive reflection switching concept of a free-space wave impinging on an array of dielectric or semiconductor pillars. Splitting the pillars of a 2D periodic array in its resonant reflection regime at a prescribed wavelength into two parts with a low-index gap of a few nanometers between parts cancels the reflection of a plane wave under normal incidence. The underlying principle lies in the strong and abrupt discontinuity of the electric field component parallel to the pillar axes caused by the gap. The electromagnetic field distribution is consequently deeply perturbed and no longer corresponds to that of an optical resonance of the array; this suppresses the reflection. The electromagnetic analysis of a silicon pillar array leads to the design of a gapless experimental model fabricated by microsystem technologies that exhibits a broad reflection maximum of a few tens of nm at a prescribed wavelength in the visible and near-IR range, and of a pillar structure with nanometer-thick low-index gap exhibiting no reflection peak over this wide wavelength range. A transmission ratio of 1:30 at a 1080 nm peak wavelength between a gapless and a 1.5 index, 30 nm-thick gap structures was measured.