The miscibility gap of InxGa1 xSbyAs1 yalloys
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/16/i=22/a=021/pdf
Reference22 articles.
1. Influence of tellurium impurity on the Properties of Ga1−X InXAsYSb1−Y (X>0.22) solid solutions
2. Interface-induced electroluminescence in the type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18single heterojunction
3. GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts
4. Low temperature phase diagram of the Ga1−xInxAsySb1−y system
5. Calculation of ternary and quaternary III–V phase diagrams
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dual-Wavelength InGaAsSb/AlGaAsSb Quantum-Well Light-Emitting Diodes;Journal of the Korean Physical Society;2018-05
2. Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
3. Incorporation of Sb in InAs∕GaAs quantum dots;Applied Physics Letters;2007-12-24
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