Defect formation and dopant diffusion in III V semiconductors: zinc diffusion in GaP
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/14/i=48/a=326/pdf
Reference16 articles.
1. Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials
2. Defect formation during zinc diffusion into GaAs
3. Formation of void/Ga‐precipitate pairs during Zn diffusion into GaAs: The competition of two thermodynamic driving forces
4. Electrophysical properties of metal–solid-electrolyte composites
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