INCREASING OF THE SHARPNESS OF p–n-JUNCTIONS IN THYRISTOR STRUCTURES BY OPTIMIZATION OF INHOMOGENEITY OF DOPED STRUCTURE AND ANNEALING TIME

Abstract

In the present paper the conditions to increase both the sharpness of the p–n-junctions, which produced as the elements of a system of rectifiers, and homogeneity of impurity concentrations in doped areas are determined. Moreover the development of a mathematical approach for analysis of dopant dynamics during annealing of dopant or radiation defects is presented. Annealing time has been optimized for increasing simultaneously the sharpness and the homogeneity.