Microstructures of 4H SiC single crystals deformed under very high stresses
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/14/i=48/a=338/pdf
Reference11 articles.
1. Plastic deformation of minerals under extreme pressure using a multi-anvil apparatus
2. Plastic behavior of 4H-SiC single crystals deformed at low strain rates
3. Dislocation glide motion in 6H SiC single crystals subjected to high-temperature deformation
4. Stacking fault energy of 6H-SiC and 4H-SiC single crystals
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1. Effect of structural anisotropy on the dislocation nucleation and evolution in 6H SiC under nanoindentation;Ceramics International;2019-08
2. Reaction pathway analysis for the conversion of perfect screw basal plane dislocation to threading edge dislocation in 4H-SiC;Japanese Journal of Applied Physics;2019-07-18
3. The role of back stress in sub-50 nm Si nanocubes;Scripta Materialia;2016-03
4. Toward Demystifying the Mohs Hardness Scale;Journal of the American Ceramic Society;2015-07-29
5. Evidence of perfect dislocation glide in nanoindented 4H-SiC;Journal of Physics: Conference Series;2013-11-29
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