The magnetic field dependence of shallow donor impurity states in GaAs/GaAlAs multi-quantum wells: a non-variational approach
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/6/i=3/a=016/pdf
Reference17 articles.
1. High magnetic field studies of resonant tunneling via shallow impurities in δ-doped quantum wells
2. Effect of magnetic field on the energy levels of a hydrogenic impurity center in GaAs/Ga1−xAlxAs quantum-well structures
3. Shallow donors in multiple-well GaAs-Ga1−xAlxAs heterostructures
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1. Localized donor states in axially symmetrical heterostructures;Superlattices and Microstructures;2010-09
2. High-energy transitions of shallow magnetodonors in a GaAs/Al0.3Ga0.7As multiple quantum well;Journal of Physics: Condensed Matter;2001-10-18
3. Quantum states and interband optical spectra in spherical GaAs-(Ga,Al)As quantum dots doped with on-centre shallow donor impurities: a real-time wavepacket propagation method;Journal of Physics: Condensed Matter;2000-11-22
4. Binding energies of ground and excited donor states bound toXvalleys in GaAs/AlAs type-II quantum wells;Physical Review B;1998-09-15
5. Coherent resonant tunnelling in an impurity quantum well in the presence of electric and strong magnetic fields;Journal of Physics: Condensed Matter;1998-02-16
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