Spin dynamics of isolated donor electrons in phosphorus-doped silicon from high-frequency electron spin resonance-Reference-Cited by-同舟云学术

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Spin dynamics of isolated donor electrons in phosphorus-doped silicon from high-frequency electron spin resonance

Published:2010-04-26 Issue:20 Volume:22 Page:206001
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Song Myeonghun,Jeong Minki,Kang Byeongki,Lee Soonchil,Ueno Tomohiro,Matsubara Akira,Mizusaki Takao,Fujii Yutaka,Mitsudo Seitaro,Chiba Meiro

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/22/i=20/a=206001/pdf

Reference25 articles.

1. A silicon-based nuclear spin quantum computer

2. 31P Nuclear Spin Dynamics in Metallic Si:P at Very Low Temperature and High Magnetic Fields

3. Spin Coherence Time T 2 in Metallic P-doped Si at Very Low Temperature

4. Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation Effects

5. Raman Spin-Lattice Relaxation of Shallow Donors in Silicon

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1. Silver sulphide nano-particles enhanced photo-current in polymer solar cells;Applied Physics A;2020-02-19

2. High-frequency electron-spin-resonance measurements on MnxMg1-xO (x= 1.0×10-4) and DPPH at very low temperatures;Journal of Physics: Conference Series;2018-03

3. High-frequency ESR measurements and ESR/NMR double resonance experiments of lightly phosphorous-doped silicon;Journal of Physics: Conference Series;2014-12-08

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