Spin Coherence Time T 2 in Metallic P-doped Si at Very Low Temperature-Reference-Cited by-同舟云学术

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Spin Coherence Time T 2 in Metallic P-doped Si at Very Low Temperature

Published:2009-11-04 Issue:3-4 Volume:158 Page:659-665
ISSN:0022-2291
Container-title:Journal of Low Temperature Physics
language:en
Short-container-title:J Low Temp Phys

Author:

Jeong M.,Song M.,Ueno T.,Mizusaki T.,Matsubara A.,Lee S.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/s10909-009-0046-1.pdf

Reference16 articles.

1. A.M. Tyryshkin et al., Phys. Rev. B 68, 193207 (2003)

2. R. Rahman et al., Phys. Rev. Lett. 99, 036403 (2007)

3. J.J.L. Morton et al., Nature 455, 1085 (2008)

4. B.E. Kane, Nature 393, 133 (1998)

5. G. Feher, Phys. Rev. 114, 1219 (1959)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room Temperature Quantum Control of N‐Donor Electrons at Si/SiO₂ Interface;Advanced Quantum Technologies;2024-04-14

2. Optically-detected NMR of optically-hyperpolarized 31P neutral donors in 28Si;Journal of Applied Physics;2011-05-15

3. Spin dynamics of isolated donor electrons in phosphorus-doped silicon from high-frequency electron spin resonance;Journal of Physics: Condensed Matter;2010-04-26

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