Reflectance and reflectance anisotropy measurements of the photoelectrochemical deposition of gold on p-type gallium arsenide (100) electrodes
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/3/i=S/a=013/pdf
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4. In situ characterization by reflectance difference spectroscopy of III–V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition
5. Reflectance-difference study of surface chemistry in MOVPE growth
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1. Surface photoabsorption interferometry studies of the growth of InP and GaP on glass;Journal of Crystal Growth;1998-12
2. INSAP: In Situ Surface Adduct Passivation as a New Route to the Protection and Functionalization of III–V Surfaces Following MOCVD Growth;Chemical Vapor Deposition;1998-10
3. Reflectance anisotropy as an in situ monitor for the growth of InP on (001) InP by pseudo-atmospheric pressure atomic layer epitaxy;Journal of Crystal Growth;1997-01
4. Adsorption of O, HCO2H and C6H5CO2H on Cu(110) studied using reflectance anisotropy. Chemical and structural influences on an optically active surface resonance;Journal of the Chemical Society, Faraday Transactions;1995
5. Reflectance anisotropy studies of the growth of InP on InP(001) at atmospheric pressures using tertiarybutylphosphine and trimethylindium;Surface Science;1994-04
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