Characterization of defect levels in semi-insulating 6H-SiC by means of photoinduced transient spectroscopy and modulated photocurrent technique
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/21/i=4/a=045801/pdf
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1. Deep‐level spectroscopy in high‐resistivity materials
2. Characterization of deep levels in Bi12GeO20by photoinduced current transient spectroscopy
3. Photoinduced current transient spectroscopy in high‐resistivity bulk materials: Instrumentation and methodology
4. Investigation of defect levels in semi-insulating materials by modulated and transient photocurrent: comparison of methods
5. Phenomenological characterization of photoactive centers in Bi12TiO20 crystals
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4. Comparison of methods applied in photoinduced transient spectroscopy to determining the defect center parameters: The correlation procedure and the signal analysis based on inverse Laplace transformation;Review of Scientific Instruments;2018-04
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