Electronic structure of InGaAs and band offsets in InGaAs/GaAs superlattices
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/3/i=50/a=004/pdf
Reference19 articles.
1. Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grownInxGa1−xAs/GaAs quantum wells
2. Concentration-dependent band offset inInxGa1−xAsGaAsstrained quantum wells
3. Large valence-band offset in strained-layerInxGa1−xAs-GaAs quantum wells
4. Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells
5. Determination of the InAs–GaAs(100) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)
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4. Effect of barrier width between GaAs/InGaAs/GaAs double coupled quantum wells on bipolar transport and terahertz radiation by hot carriers in lateral electric field;Low Temperature Physics;2020-06
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