First-principles local-orbital calculation of the structural and electronic properties of ordered and random alloys of GaN and AlN
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference35 articles.
1. Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE
2. Energy band‐gap bowing parameter in an AlxGa1−xN alloy
3. Cathodoluminescence Properties of Undoped and Zn-Doped AlxGa1-xN Grown by Metalorganic Vapor Phase Epitaxy
4. Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy
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