Oxidation of the silicon terminated (1 0 0) diamond surface
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/29/i=2/a=025003/pdf
Reference31 articles.
1. Strong and Tunable Spin–Orbit Coupling in a Two-Dimensional Hole Gas in Ionic-Liquid Gated Diamond Devices
2. Spin–Orbit Interaction in a Two-Dimensional Hole Gas at the Surface of Hydrogenated Diamond
3. Enzyme-Modified Field Effect Transistors Based on Surface-Conductive Single-Crystalline Diamond
4. Diamond Surfaces with Air-Stable Negative Electron Affinity and Giant Electron Yield Enhancement
5. Extremely high negative electron affinity of diamond via magnesium adsorption
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2. Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm2V-1s-1 and |VTH|> 3V Normally-off for Complementary Power Circuits;2023 International Electron Devices Meeting (IEDM);2023-12-09
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