Development of electronic band structure of the K-adsorbed Si(111)7 × 7 surface
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Electronic structure of the annealed Ge(111) and Si(111) surfaces: Similarities in local bonding
2. Surface Electronic Structure of Si (111)-(7×7) Resolved in Real Space
3. Adatom electronic structure of the Si(111)7×7 surface
4. Development of the surface electronic structure of K and Cs overlayers on Si(111)7×7
5. Electron correlation, metallization, and Fermi-level pinning at ultrathin K/Si(111) interfaces
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1. Initial stages of Mg adsorption on the Si(111)-7×7 surface;Journal of Applied Physics;2010-01-15
2. Self-organization of nanostructures on the n-GaN(0001) surface in the Cs and Ba adsorption;JETP Letters;2008-03
3. Charge accumulation in ultrathin Cs / n - GaN and Cs / n - InGaN interfaces;Solid State Communications;2007-09
4. Room-temperature growth of Mg on Si(111): stepwise versus continuous deposition;Journal of Physics: Condensed Matter;2007-05-31
5. Charge accumulation layer in Cs,Ba/n-GaN(0001) ultrathin interfaces: Electronic and photoemission properties;Physics of the Solid State;2007-04
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