The influence of Si delta doping on the electronic structure of AlGaAs-GaAs-AlGaAs single quantum wells
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/6/i=25/a=013/pdf
Reference33 articles.
1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
2. Nonlinear transport phenomena in a triangular quantum well
3. Normal and hot electro-phonon resonance effect in a quasi-two-dimensional semiconductor system
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1. COMBINED METHOD FOR SIMULATING ELECTRON SPECTRUM OF δ-DOPED QUANTUM WELLS IN N-SI WITH MANY-BODY CORRECTIONS;Progress In Electromagnetics Research M;2013
2. Electron spectrum of δ-doped quantum wells by the Thomas–Fermi method at finite temperatures;Physica B: Condensed Matter;2011-05
3. Self-consistent calculation of transport properties in Si GaAs quantum wells as a function of the temperature;Physica B: Condensed Matter;2010-10
4. Self-consistent electronic subband structure of undoped InAs/GaSb-based type II and broken-gap quantum well systems;Journal of Applied Physics;2007-08
5. EFFECTS OF DIELECTRIC MISMATCH ON THE PLASMONS IN QUANTUM WELL SYSTEMS;International Journal of Modern Physics B;2003-12-30
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