Self-consistent electronic subband structure of undoped InAs/GaSb-based type II and broken-gap quantum well systems
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2759873
Reference18 articles.
1. Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices
2. Carrier densities in InAs–Ga(Al)Sb(As) quantum wells
3. Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells
4. Evidence for a Stable Excitonic Ground State in a Spatially Separated Electron-Hole System
5. Anticrossing semiconducting band gap in nominally semimetallic InAs/GaSb superlattices
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1. Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure;Materials Advances;2020
2. Electronic excitation-induced structural, optical, and magnetic properties of Ni-doped HoFeO3 thin films;Applied Physics A;2017-05-26
3. Magnetizations and magneto-transport properties of Ni-doped PrFeO 3 thin films;Chinese Physics B;2014-04
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