Studies of boron–interstitial clusters in Si
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/15/i=29/a=308/pdf
Reference36 articles.
1. B cluster formation and dissolution in Si: A scenario based on atomistic modeling
2. The fraction of substitutional boron in silicon during ion implantation and thermal annealing
3. Ab initio energetics of boron-interstitial clusters in crystalline Si
4. Ab initiopseudopotential calculations of B diffusion and pairing in Si
5. Ab initio pseudopotential calculations of dopant diffusion in Si
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2. Structure and Properties of Heavily B and P Codoped Amorphous Silicon Quantum Dots;The Journal of Physical Chemistry C;2021-10-15
3. Growth of heavily-doped Germanium single crystals for mid-Infrared applications;Journal of Crystal Growth;2020-04
4. Photoluminescence, infrared, and Raman spectra of co-doped Si nanoparticles from first principles;The Journal of Chemical Physics;2018-10-21
5. Visualizing a core–shell structure of heavily doped silicon quantum dots by electron microscopy using an atomically thin support film;Nanoscale;2018
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